| PART |
Description |
Maker |
| EPE6125GD |
Low Profile 10 Base-T Interface Module
DATACOM TRANSFORMER FOR 10 BASE-T APPLICATION(S)
|
PCA ELECTRONICS INC.
|
| EPG4014S-RCTR |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
Samsung Semiconductor Co., Ltd.
|
| EPG4012S |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
|
| 6814 |
LAN 10 BASE-T / 100 BASE-T Single TX Transformer
|
FILTRAN[Filtran LTD]
|
| NT805-401T NT805-558T NT805-601T NT805-652T NT805- |
SINGLE PORT NT805-XXXT SERIES TRANSFORMER, LAN, SMD 10/100 BASE-TX 单端NT805 - XXXT系列变压器，局域网，贴片的10/100 BASE -得克萨斯
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MTJ108T11RLXM1 MTJ810T11RLXM1 MTJ88T11RLXM1 MTJ101 |
MAGNETICS TELEPHONE JACK INTEGRATED MAGNETICS & LEDs 10/100 BASE T & 1000 BASE T
|
Adam Technologies, Inc.
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| J0026D21 J0011D01 J0011D01B J0011D01BNL J0011D01NL |
DATACOM TRANSFORMER FOR LAN; 10/100 BASE-TX; ETHERNET APPLICATION(S)
10/100 Base-TX RJ45 1x1 Tab-DOWN with LEDs 8-pin (J0 series) integrated magnetics connector (ICM), designed to
|
PULSE ELECTRONICS CORP
Pulse A Technitrol Company
Pulse Engineering, Inc.
http://
Pulse A Technitrol Comp...
|
| AV1890 |
100 base-T/100 base-TX integrated PHYceiver
|
Integrated Circuit Systems
|
| MOC8113 MOC8111 MOC8111_04 MOC8112 MOC8111300 MOC8 |
6-Pin DIP Phototransistor Output Optocoupler- No Base Connection
6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS (NO BASE CONNECTION)
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
